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產(chǎn)品

Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
D2H620DE1
D2H500DE1
D2H400DE1
DXG1CH08A-540EF* 780P2 758~821 57.0 49.0 58.0 18.0 Released Product
D2H320DB1
D2H320DE1
D2H290DE1
DXG2CH22A-520EF* 780P2 2110~2170 57.1 49.0 58.2 14.8 Released Product
D2H235DE1
DXG1CH27A-200EF* 780P2 2496~2690 53.4 45.0 50.0 14.1 Released Product
DXG2CH27A-500EFV* 780P2 2500~2700 56.7 47.2 52.9 15.0 Released Product
D2H210DE1
D2H185DE1
DXG1CH38A-200EF* 780P2 3300~3800 53.0 44.5 45.0 15.3 Released Product
D2H150DE1
DXG2CH38A-450EFV* 780P2 3300~3800 56.7 47.5 46.0 14.5 Released Product
D2H135DE1
DXG1CHD8A-F2EF* 780P2 3300~3800 56.5 48.5 42.0 14.0 Released Product
D2H120DE1
DXG2CH50A-200EF* 780P2 4800~5000 53.2 44.5 44.2 14.2 Released Product

D2H620DE1

Brief description for the product

D2H620DE1

D2H620DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點(diǎn)，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)值單位
產(chǎn)品尺寸1445*5870mm
應(yīng)用電壓48V
典型功率620W
效率
75%
增益18.3Db











效率和增益指標(biāo)為對(duì)應(yīng)2.6GHz測(cè)試頻點(diǎn)、最大效率點(diǎn)下的仿真數(shù)據(jù)

仿真測(cè)試條件：VDD = 48 V, IDQ = 2400 mA, 頻率 = 2.6 GHz


D2H500DE1

Brief description for the product

D2H500DE1

D2H500DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點(diǎn)，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)值單位
產(chǎn)品尺寸1225*5900mm
應(yīng)用電壓48V
典型功率500W
效率
72%
增益18.4Db











效率和增益指標(biāo)為對(duì)應(yīng)2.6GHz測(cè)試頻點(diǎn)、最大效率點(diǎn)下的仿真數(shù)據(jù)

仿真測(cè)試條件：VDD = 48 V, IDQ = 1872 mA, 頻率 = 2.6 GHz


D2H400DE1

Brief description for the product

D2H400DE1

D2H400DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點(diǎn)，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)值單位
產(chǎn)品尺寸1065*5900mm
應(yīng)用電壓48V
典型功率400W
效率
73%
增益19.2Db











效率和增益指標(biāo)為對(duì)應(yīng)2.6GHz測(cè)試頻點(diǎn)、最大效率點(diǎn)下的仿真數(shù)據(jù)

仿真測(cè)試條件：VDD = 48 V, IDQ = 1488 mA, 頻率 = 2.6 GHz


DXG1CH08A-540EF*

Brief description for the product

DXG1CH08A-540EF*

DXG1CH08A-540EF is a 540 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.


Operating Characteristics


Parameter

Value

Unit

Frequency (Min.)

758

MHz

Frequency (Max.)

821

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

57.0

dBm

Power Gain @ 780 MHz

18.0

dB

Efficiency @ 780 MHz

58.0

%

ACPR @ 780 MHz

-28.0

dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 48 V, IDQA = 500 mA, VGSB = - 4.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H320DB1

Brief description for the product

D2H320DB1

D2H320DB1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點(diǎn)，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)值單位
產(chǎn)品尺寸915*6075mm
應(yīng)用電壓48V
典型功率320W
效率
76%
增益20.1Db











效率和增益指標(biāo)為對(duì)應(yīng)2.6GHz測(cè)試頻點(diǎn)、最大效率點(diǎn)下的仿真數(shù)據(jù)

仿真測(cè)試條件：VDD = 48 V, IDQ = 1180 mA, 頻率 = 2.6 GHz


D2H320DE1

Brief description for the product

D2H320DE1

D2H320DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點(diǎn)，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)值單位
產(chǎn)品尺寸935*5870mm
應(yīng)用電壓48V
典型功率320W
效率
76%
增益19.3Db











效率和增益指標(biāo)為對(duì)應(yīng)2.6GHz測(cè)試頻點(diǎn)、最大效率點(diǎn)下的仿真數(shù)據(jù)

仿真測(cè)試條件：VDD = 48 V, IDQ = 1176 mA, 頻率 = 2.6 GHz


D2H290DE1

Brief description for the product

D2H290DE1

D2H290DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點(diǎn)，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)值單位
產(chǎn)品尺寸955*5795mm
應(yīng)用電壓48V
典型功率290W
效率
77%
增益20.2dB











效率和增益指標(biāo)為對(duì)應(yīng)2.6GHz測(cè)試頻點(diǎn)、最大效率點(diǎn)下的仿真數(shù)據(jù)

仿真測(cè)試條件：VDD = 48 V, IDQ = 1056 mA, 頻率 = 2.6 GHz


DXG2CH22A-520EF*

Brief description for the product

DXG2CH22A-520EF*

DXG2CH22A-520EF is a 520 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2110 MHz to 2170 MHz.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

2110

MHz

Frequency (Max.)

2170

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

57.1

dBm

Power Gain @ 2140 MHz

14.8

dB

Efficiency @ 2140 MHz

58.2

%

ACPR @ 2140 MHz

-34.6

dBC


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H235DE1

Brief description for the product

D2H235DE1

D2H235DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點(diǎn)，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)值單位
產(chǎn)品尺寸835*5440mm
應(yīng)用電壓48V
典型功率235W
效率
79%
增益20.3dB











效率和增益指標(biāo)為對(duì)應(yīng)2.6GHz測(cè)試頻點(diǎn)、最大效率點(diǎn)下的仿真數(shù)據(jù)

仿真測(cè)試條件：VDD = 48 V, IDQ = 842 mA, 頻率 = 2.6 GHz


DXG1CH27A-200EF*

Brief description for the product

DXG1CH27A-200EF*

DXG1CH27A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 2496 MHz to 2690 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and an earless thermally-enhanced package.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

2496

MHz

Frequency (Max.)

2690

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

53.4

dBm

Power Gain @ 2595 MHz

14.1

dB

Efficiency @ 2595 MHz

50.0

%

ACPR @ 2595 MHz

-30.0

dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.3 V, Pout = 45.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2CH27A-500EFV*

Brief description for the product

DXG2CH27A-500EFV*

DXG2CH27A-500EFV is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2500 MHz to 2700 MHz.


Operating Characteristics


Parameter

Value

Unit

Frequency (Min.)

2500

MHz

Frequency (Max.)

2700

MHz

Supply Voltage (Typ.)

47

V

56.7Psat (Typ.)

56.7

dBm

Power Gain @ 2593 MHz

15.0

dB

Efficiency @ 2593 MHz

52.9

%

ACPR @ 2593 MHz-32.9dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 47 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 47.2 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H210DE1

Brief description for the product

D2H210DE1

D2H210DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點(diǎn)，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)值單位
產(chǎn)品尺寸855*4860mm
應(yīng)用電壓48V
典型功率210W
效率
80%
增益20.5dB











效率和增益指標(biāo)為對(duì)應(yīng)2.6GHz測(cè)試頻點(diǎn)、最大效率點(diǎn)下的仿真數(shù)據(jù)

仿真測(cè)試條件：VDD = 48 V, IDQ = 738 mA, 頻率 = 2.6 GHz


D2H185DE1

Brief description for the product

D2H185DE1

D2H185DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點(diǎn)，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)值單位
產(chǎn)品尺寸905*4125mm
應(yīng)用電壓48V
典型功率185W
效率
80%
增益20.0dB











效率和增益指標(biāo)為對(duì)應(yīng)2.6GHz測(cè)試頻點(diǎn)、最大效率點(diǎn)下的仿真數(shù)據(jù)

仿真測(cè)試條件：VDD = 48 V, IDQ = 655 mA, 頻率 = 2.6 GHz


DXG1CH38A-200EF*

Brief description for the product

DXG1CH38A-200EF*

DXG1CH38A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 3300 MHz to 3800 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.

 


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

3300

MHz

Frequency (Max.)

3800

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

53.0

dBm

Power Gain @ 3500 MHz

15.3

dB

Efficiency @ 3500 MHz

45.0

%

ACPR @ 3500 MHz

-30.0

dBC

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 180 mA, VGSB = - 5.0 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H150DE1

Brief description for the product

D2H150DE1

D2H150DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點(diǎn)，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)值單位
產(chǎn)品尺寸795*3410mm
應(yīng)用電壓48V
典型功率150W
效率
80%
增益20.4dB











效率和增益指標(biāo)為對(duì)應(yīng)2.6GHz測(cè)試頻點(diǎn)、最大效率點(diǎn)下的仿真數(shù)據(jù)

仿真測(cè)試條件：VDD = 48 V, IDQ = 504 mA, 頻率 = 2.6 GHz


DXG2CH38A-450EFV*

Brief description for the product

DXG2CH38A-450EFV*

DXG2CH38A-450EFV is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

3300

MHz

Frequency (Max.)

3800

MHz

Supply Voltage (Typ.)

50

V

Psat (Typ.)

56.7

dBm

Power Gain @ 3500 MHz

14.7

dB

Efficiency @ 3500 MHz

46

%

ACPR @ 3500 MHz-34.2dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQA = 450 mA, VGSB = - 5.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H135DE1

Brief description for the product

D2H135DE1

D2H135DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點(diǎn)，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)值單位
產(chǎn)品尺寸975*4165mm
應(yīng)用電壓48V
典型功率135W
效率
80%
增益21.0dB











效率和增益指標(biāo)為對(duì)應(yīng)2.6GHz測(cè)試頻點(diǎn)、最大效率點(diǎn)下的仿真數(shù)據(jù)

仿真測(cè)試條件：VDD = 48 V, IDQ = 442 mA, 頻率 = 2.6 GHz


DXG1CHD8A-F2EF*

Brief description for the product

DXG1CHD8A-F2EF*

DXG1CHD8A-F2EF is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)3300MHz
Frequency (Max.)3800MHz
Supply Voltage (Typ.)52V
Psat (Typ.) 56.5dBm
Power Gain @ 3400 MHz14.0dB
Efficiency @ 3400 MHz42.0%
ACPR @ 3400 MHz-28.0dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 52 V, IDQA = 400 mA, VGSB = - 5.2 V,Pout = 48.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


D2H120DE1

Brief description for the product

D2H120DE1

D2H120DE1是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點(diǎn)，是各種射頻和微波應(yīng)用的理想選擇。

Operating Characteristics

參數(shù)值單位
產(chǎn)品尺寸860*2710mm
應(yīng)用電壓48V
典型功率120W
效率
81%
增益20.8dB











效率和增益指標(biāo)為對(duì)應(yīng)2.6GHz測(cè)試頻點(diǎn)、最大效率點(diǎn)下的仿真數(shù)據(jù)

仿真測(cè)試條件：VDD = 48 V, IDQ = 383 mA, 頻率 = 2.6 GHz


DXG2CH50A-200EF*

Brief description for the product

DXG2CH50A-200EF*

DXG2CH50A-200EF is a 200 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

4800

MHz

Frequency (Max.)

5000

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

53.2

dBm

Power Gain @ 4900 MHz

14.2

dB

Efficiency @ 4900 MHz

44.5

%

ACPR @ 4900 MHz-28.5/-47dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 4.8 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


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