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陶封分立功放管

Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
DF2H0040-185DF 360F1 DC~4000 185 53.7 73.6 15.1 Engineering Sample
DF2H0040-135DF 360F1 DC~4000 135 51.6 78.5 19.0 Engineering Sample
DF2H0040-95DF 360F1 DC~4000 95.0 50.5 77.4 18.3 Engineering Sample
DF2H0060-45CF 200P1 DC~6000 45.0 47.5 75.5 19.3 Engineering Sample
DF2H0060-20DF 200F1 DC~6000 20.0 44.7 76.5 20.0 Engineering Sample
DF2H0060-20CF 200P1 DC~6000 20.0 44.7 76.5 20.0 Engineering Sample
DXG2CH50A-450EF* 780P2 4800~5000 450 47.5 43.0 12.0 Engineering Sample
DXG1CH25P-320EF 780P2 2435~2465 320 55.0 75.0 14.0 Released Product
DXG1CH08A-540EF* 780P2 758~821 57.0 49.0 58.0 18.0 Released Product
DXG2CH22A-520EF* 780P2 2110~2170 57.1 49.0 58.2 14.8 Released Product
DXG1CH27A-200EF* 780P2 2496~2690 53.4 45.0 50.0 14.1 Released Product
DXG2CH27A-500EFV* 780P2 2500~2700 56.7 47.2 52.9 15.0 Released Product
DXG1CH38A-200EF* 780P2 3300~3800 53.0 44.5 45.0 15.3 Released Product
DXG2CH38A-450EFV* 780P2 3300~3800 56.7 47.5 46.0 14.5 Released Product
DXG1CHD8A-F2EF* 780P2 3300~3800 56.5 48.5 42.0 14.0 Released Product
DXG2CH50A-200EF* 780P2 4800~5000 53.2 44.5 44.2 14.2 Released Product
DOD1H0015-1800EF 1230P2 915 1800 61.5 79.0 18.0 Released Product
DOD1H2425-600EF 1230P2 2435~2465 600 57.4 73.5 14.7 Released Product

DF2H0040-185DF


Brief description for the product

DF2H0040-185DF

DF2H0040-185DF is a 185 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

4000

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 2600 MHz

53.7

dBm

Power Gain2 @ 2600 MHz

15.1

dB

Efficiency2 @ 2600 MHz

73.6

%

Note: Measured in the DF2H0040-185DF application circuit, test condition: VDS = 48 V, IDQ = 400 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.

2 .Test condition: Based on Maximum Drain Efficiency.


DF2H0040-135DF


Brief description for the product

DF2H0040-135DF

DF2H0040-135DF is a 135 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

4000

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 2500 MHz

51.6

dBm

Power Gain2 @ 2500 MHz

19.0

dB

Efficiency2 @ 2500 MHz

78.5

%


Note: Measured in the DF2H0040-135DF application circuit, test condition: VDS = 48 V, IDQ = 360 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.

2 .Test condition: Based on Maximum Drain Efficiency.




DF2H0040-95DF


Brief description for the product

DF2H0040-95DF

DF2H0040-95DF is a 95 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz. 

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

4000

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 2500 MHz

50.5

dBm

Power Gain2 @ 2500 MHz

18.3

dB

77.4Efficiency2 @ 2500 MHz

77.4

%


Note: Measured in the DF2H0040-95DF application circuit, test condition: VDS = 48 V, IDQ = 200 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.

2 .Test condition: Based on Maximum Drain Efficiency.


DF2H0060-45CF


Brief description for the product

DF2H0060-45CF

DF2H0060-45CF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 2600 MHz

47.5

dBm

Power Gain2 @ 2600 MHz

19.3

dB

Efficiency2 @ 2600 MHz

75.5

%


Note: Measured in the DF2H0060-45CF application circuit, test condition: VDS = 48 V, IDQ = 80 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.

2 .Test condition: Based on Maximum Drain Efficiency.



DF2H0060-20DF


Brief description for the product

DF2H0060-20DF

DF2H0060-20DF is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 2600 MHz

44.7

dBm

Power Gain2 @ 2600 MHz

20

dB

Efficiency2 @ 2600 MHz

76.5

%


Note: Measured in the DF2H0060-20DF application circuit, test condition: VDS = 48 V, IDQ = 50 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.

2 .Test condition: Based on Maximum Drain Efficiency.


DF2H0060-20CF


Brief description for the product

DF2H0060-20CF

DF2H0060-20CF is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz. 

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 2600 MHz

44.7

dBm

Power Gain2 @ 2600 MHz

20

dB

Efficiency2 @ 2600 MHz

76.5

%


Note: Measured in the DF2H0060-20CF application circuit, test condition: VDS = 48 V, IDQ = 50 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.

2 .Test condition: Based on Maximum Drain Efficiency.


DXG2CH50A-450EF*


Brief description for the product

DXG2CH50A-450EF*

DXG2CH50A-450EF is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

4800

MHz

Frequency (Max.)

5000

MHz

Supply Voltage (Typ.)

52

V

Psat (Typ.)

56.6

dBm

Power Gain @ 4900 MHz

11.8

dB

Efficiency @ 4900 MHz

42.6

%

ACPR @ 4900 MHz-34.0/-47.0dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 52 V, IDQA = 2300 mA, VGSB = - 4.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG1CH25P-320EF


Brief description for the product

DXG1CH25P-320EF

DXG1CH25P-320EF is a 320 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

2400

MHz

Frequency (Max.)

2500

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 2435 MHz

55.3

dBm

Power Gain2 @ 2435 MHz

14.6

dB

Efficiency2 @ 2435 MHz

73.6

%


Note: Above Performance is the typical performance in Dynax's demo  with the device soldered onto the heatsink, test condition:VDS= 50 V, VGS = - 4.8 V.


DXG1CH08A-540EF*


Brief description for the product

DXG1CH08A-540EF*

DXG1CH08A-540EF is a 540 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 758 MHz to 821 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.


Operating Characteristics


Parameter

Value

Unit

Frequency (Min.)

758

MHz

Frequency (Max.)

821

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

57.0

dBm

Power Gain @ 780 MHz

18.0

dB

Efficiency @ 780 MHz

58.0

%

ACPR @ 780 MHz

-28.0

dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 48 V, IDQA = 500 mA, VGSB = - 4.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2CH22A-520EF*


Brief description for the product

DXG2CH22A-520EF*

DXG2CH22A-520EF is a 520 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2110 MHz to 2170 MHz.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

2110

MHz

Frequency (Max.)

2170

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

57.1

dBm

Power Gain @ 2140 MHz

14.8

dB

Efficiency @ 2140 MHz

58.2

%

ACPR @ 2140 MHz

-34.6

dBC


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 49.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF.ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG1CH27A-200EF*


Brief description for the product

DXG1CH27A-200EF*

DXG1CH27A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 2496 MHz to 2690 MHz cellular base station applications. It features input matching, wide instantaneous bandwidth and an earless thermally-enhanced package.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

2496

MHz

Frequency (Max.)

2690

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

53.4

dBm

Power Gain @ 2595 MHz

14.1

dB

Efficiency @ 2595 MHz

50.0

%

ACPR @ 2595 MHz

-30.0

dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 120 mA, VGSB = - 5.3 V, Pout = 45.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2CH27A-500EFV*


Brief description for the product

DXG2CH27A-500EFV*

DXG2CH27A-500EFV is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 2500 MHz to 2700 MHz.


Operating Characteristics


Parameter

Value

Unit

Frequency (Min.)

2500

MHz

Frequency (Max.)

2700

MHz

Supply Voltage (Typ.)

47

V

56.7Psat (Typ.)

56.7

dBm

Power Gain @ 2593 MHz

15.0

dB

Efficiency @ 2593 MHz

52.9

%

ACPR @ 2593 MHz-32.9dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 47 V, IDQA = 200 mA, VGSB = - 5.5 V, Pout = 47.2 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG1CH38A-200EF*


Brief description for the product

DXG1CH38A-200EF*

DXG1CH38A-200EF is a 200 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for 3300 MHz to 3800 MHz cellular base station applications. It features input matching, wideband and a thermally-enhanced package.

 


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

3300

MHz

Frequency (Max.)

3800

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

53.0

dBm

Power Gain @ 3500 MHz

15.3

dB

Efficiency @ 3500 MHz

45.0

%

ACPR @ 3500 MHz

-30.0

dBC

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 180 mA, VGSB = - 5.0 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2CH38A-450EFV*


Brief description for the product

DXG2CH38A-450EFV*

DXG2CH38A-450EFV is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

3300

MHz

Frequency (Max.)

3800

MHz

Supply Voltage (Typ.)

50

V

Psat (Typ.)

56.7

dBm

Power Gain @ 3500 MHz

14.7

dB

Efficiency @ 3500 MHz

46

%

ACPR @ 3500 MHz-34.2dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQA = 450 mA, VGSB = - 5.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG1CHD8A-F2EF*


Brief description for the product

DXG1CHD8A-F2EF*

DXG1CHD8A-F2EF is a 500 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 3300 MHz to 3800 MHz.

Operating Characteristics

ParameterValueUnit
Frequency (Min.)3300MHz
Frequency (Max.)3800MHz
Supply Voltage (Typ.)52V
Psat (Typ.) 56.5dBm
Power Gain @ 3400 MHz14.0dB
Efficiency @ 3400 MHz42.0%
ACPR @ 3400 MHz-28.0dBc

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, Test condition: VDS = 52 V, IDQA = 400 mA, VGSB = - 5.2 V,Pout = 48.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2CH50A-200EF*


Brief description for the product

DXG2CH50A-200EF*

DXG2CH50A-200EF is a 200 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

4800

MHz

Frequency (Max.)

5000

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

53.2

dBm

Power Gain @ 4900 MHz

14.2

dB

Efficiency @ 4900 MHz

44.5

%

ACPR @ 4900 MHz-28.5/-47dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 200 mA, VGSB = - 4.8 V, Pout = 44.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DOD1H0015-1800EF


Brief description for the product

DOD1H0015-1800EF

DOD1H0015-1800EF is a 1800 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for RF energy applications at frequencies from DC to 1500 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

DC

MHz

Frequency (Max.)

1500

MHz

Supply Voltage (Typ.)

50

V

Psat (Typ.)

61.5

dBm

Power Gain @ 650 MHz

18.0

dB

Efficiency @ 650 MHz

79.0

%


Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, IDQ = 200 mA, test signal is CW.


DOD1H2425-600EF


Brief description for the product

DOD1H2425-600EF

DOD1H2425-600EF is a 600 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

2400

MHz

Frequency (Max.)

2500

MHz

Supply Voltage (Typ.)

50

V

Psat (Typ.)

57.4

dBm

Power Gain @ 2450 MHz

14.7

dB

Efficiency @ 2450 MHz

73.5

%


Note: Above Performance is the typical performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 50 V, VGS = - 4.8 V, test signal is CW.


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