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產品

Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
DF2H0014-175CF 400P1 DC~1400 175 52.8 67.0 18.2 Engineering Sample
DF1H0015-900EF 780P2 DC~1500 900 58.7 74.5 17.4 Engineering Sample
DF2H0040-185DF 360F1 DC~4000 185 53.7 73.6 15.1 Engineering Sample
DF2H0040-135DF 360F1 DC~4000 135 51.6 78.5 19.0 Engineering Sample
DF2H0040-95DF 360F1 DC~4000 95.0 50.5 77.4 18.3 Engineering Sample
DF2H0060-45CF 200P1 DC~6000 45.0 47.5 75.5 19.3 Engineering Sample
DF2H0060-20DF 200F1 DC~6000 20.0 44.7 76.5 20.0 Engineering Sample
DF2H0060-20CF 200P1 DC~6000 20.0 44.7 76.5 20.0 Engineering Sample
DXG2CH50A-450EF* 780P2 4800~5000 450 47.5 43.0 12.0 Engineering Sample
DXG2MH50A-50N* LGA 6mm×10mm 4700~5000 50.0 38.8 40.5 28.0 Released Product
DF1G0015-08N LGA 4mm×4mm 20~1500 8.0 39.4 59.4 17.2 Engineering Sample
DXG1PH60B-10N2* DFN 4mm×4mm DC~6000 10.0 34.0 32.0 20.0 Released Product
DXG1CH25P-320EF 780P2 2435~2465 320 55.0 75.0 14.0 Released Product
D2J080DH2
D2J325DB2
D2J185DE2
D2J160DH2
D2J140DE2
D2J090DE2
D2J070DH2

DF2H0014-175CF

Brief description for the product

DF2H0014-175CF

DF2H0014-175CF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

1400

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 990 MHz

52.8

dBm

Power Gain2 @ 990 MHz

18.2

dB

Efficiency2@ 910 MHz

67.0

%


Note: Measured in the DF2H0014-175CF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.

1. The output power is saturated power.

2. Test condition: Based on Pout. = 175W.


DF1H0015-900EF

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

1500

MHz

Supply Voltage (Typ.)

50

V

Psat @ 910 MHz

58.7

dBm

Power Gain1 @ 910 MHz

18.6

dB

Efficiency1 @ 910 MHz

68.8

%


Note: Measured in the DF1H0015-900EF application circuit, test condition: VDS = 50 V, IDQ = 600 mA.

1.Test condition: Based on Pout = 58 dbm.


DF2H0040-185DF

Brief description for the product

DF2H0040-185DF

DF2H0040-185DF is a 185 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

4000

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 2600 MHz

53.7

dBm

Power Gain2 @ 2600 MHz

15.1

dB

Efficiency2 @ 2600 MHz

73.6

%

Note: Measured in the DF2H0040-185DF application circuit, test condition: VDS = 48 V, IDQ = 400 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.

2 .Test condition: Based on Maximum Drain Efficiency.


DF2H0040-135DF

Brief description for the product

DF2H0040-135DF

DF2H0040-135DF is a 135 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

4000

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 2500 MHz

51.6

dBm

Power Gain2 @ 2500 MHz

19.0

dB

Efficiency2 @ 2500 MHz

78.5

%


Note: Measured in the DF2H0040-135DF application circuit, test condition: VDS = 48 V, IDQ = 360 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.

2 .Test condition: Based on Maximum Drain Efficiency.




DF2H0040-95DF

Brief description for the product

DF2H0040-95DF

DF2H0040-95DF is a 95 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz. 

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

4000

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 2500 MHz

50.5

dBm

Power Gain2 @ 2500 MHz

18.3

dB

77.4Efficiency2 @ 2500 MHz

77.4

%


Note: Measured in the DF2H0040-95DF application circuit, test condition: VDS = 48 V, IDQ = 200 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.

2 .Test condition: Based on Maximum Drain Efficiency.


DF2H0060-45CF

Brief description for the product

DF2H0060-45CF

DF2H0060-45CF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 2600 MHz

47.5

dBm

Power Gain2 @ 2600 MHz

19.3

dB

Efficiency2 @ 2600 MHz

75.5

%


Note: Measured in the DF2H0060-45CF application circuit, test condition: VDS = 48 V, IDQ = 80 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.

2 .Test condition: Based on Maximum Drain Efficiency.



DF2H0060-20DF

Brief description for the product

DF2H0060-20DF

DF2H0060-20DF is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 2600 MHz

44.7

dBm

Power Gain2 @ 2600 MHz

20

dB

Efficiency2 @ 2600 MHz

76.5

%


Note: Measured in the DF2H0060-20DF application circuit, test condition: VDS = 48 V, IDQ = 50 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.

2 .Test condition: Based on Maximum Drain Efficiency.


DF2H0060-20CF

Brief description for the product

DF2H0060-20CF

DF2H0060-20CF is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz. 

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 2600 MHz

44.7

dBm

Power Gain2 @ 2600 MHz

20

dB

Efficiency2 @ 2600 MHz

76.5

%


Note: Measured in the DF2H0060-20CF application circuit, test condition: VDS = 48 V, IDQ = 50 mA,Pulse width = 100 μs, Duty cycle = 10 %.

1.Test condition: Based on Maximum Output Power.

2 .Test condition: Based on Maximum Drain Efficiency.


DXG2CH50A-450EF*

Brief description for the product

DXG2CH50A-450EF*

DXG2CH50A-450EF is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

4800

MHz

Frequency (Max.)

5000

MHz

Supply Voltage (Typ.)

52

V

Psat (Typ.)

56.6

dBm

Power Gain @ 4900 MHz

11.8

dB

Efficiency @ 4900 MHz

42.6

%

ACPR @ 4900 MHz-34.0/-47.0dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 52 V, IDQA = 2300 mA, VGSB = - 4.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DXG2MH50A-50N*

Brief description for the product

DXG2MH50A-50N*

DXG2MH50A-50N is a 50 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4700 MHz to 5000 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

2496

MHz

Frequency (Max.)

2690

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

49.9

dBm

Power Gain @ 2600 MHz

15.9

dB

Efficiency @ 2600 MHz

56.5

%

ACPR @ 2600 MHz-32.5dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


DF1G0015-08N

Brief description for the product

DF1G0015-08N

DF1G0015-08N is a 8 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1500 MHz. 

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

20

MHz

Frequency (Max.)

1500

MHz

Supply Voltage (Typ.)

28

V

Psat@325 MHz

39.7

dBm

Power Gain @ 325 MHz

17.5

dB

Efficiency @ 325 MHz

63.8

%


Note: Measured in the DF1G0015-08N application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Input signal is CW.


DXG1PH60B-10N2*

Brief description for the product

DXG1PH60B-10N2*

DXG1PH60B-10N2 is a 10 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

DC

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

40.3

dBm

Power Gain @ 3500 MHz

20.2

dB

Efficiency @ 3500 MHz

32.3

%


Note: Above Performance is the typical Doherty performance in Dynax's demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA.


DXG1CH25P-320EF

Brief description for the product

DXG1CH25P-320EF

DXG1CH25P-320EF is a 320 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.

Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

2400

MHz

Frequency (Max.)

2500

MHz

Supply Voltage (Typ.)

48

V

Psat1 @ 2435 MHz

55.3

dBm

Power Gain2 @ 2435 MHz

14.6

dB

Efficiency2 @ 2435 MHz

73.6

%


Note: Above Performance is the typical performance in Dynax's demo  with the device soldered onto the heatsink, test condition:VDS= 50 V, VGS = - 4.8 V.


D2J080DH2

Brief description for the product

D2J080DH2

D2J080DH2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應用的理想選擇。

Operating Characteristics

參數值單位
產品尺寸725*2985mm
典型功率 @6GHz 48V80W
效率 @6GHz 48V73%
增益 @6GHz 48V20.6dB
典型功率 @10GHz 28V44W
效率 @10GHz 28V59%
增益 @10GHz 28V15.5dB














1、效率、增益標識為對應 48V 6GHz頻點，最大效率下的仿真數據；

仿真測試條件：VDD = 48 V, IDQ = 264 mA, 頻率 = 6 GHz


2、效率、增益標識為對應 28V 10GHz頻點，最大效率下的仿真數據

仿真測試條件：VDD = 28 V, IDQ = 264 mA, 頻率 = 10 GHz


D2J325DB2

Brief description for the product

D2J325DB2

D2J325DB2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應用的理想選擇。

Operating Characteristics

參數值單位
產品尺寸945*6075mm
典型功率 @6GHz 48V325W
效率 @6GHz 48V61%
增益 @6GHz 48V17.3dB
典型功率 @10GHz 28V180W
效率 @10GHz 28V45%
增益 @10GHz 28V9.8dB














1、效率、增益標識為對應 48V 6GHz頻點，最大效率下的仿真數據；

仿真測試條件：VDD = 48 V, IDQ = 1267 mA, 頻率 = 6 GHz


2、效率、增益標識為對應 28V 10GHz頻點，最大效率下的仿真數據

仿真測試條件：VDD = 28 V, IDQ = 1267 mA, 頻率 = 10 GHz


D2J185DE2

Brief description for the product

D2J185DE2

D2J185DE2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應用的理想選擇。

Operating Characteristics

參數值單位
產品尺寸920*4250mm
典型功率 @6GHz 48V185W
效率 @6GHz 48V67%
增益 @6GHz 48V18.1dB
典型功率 @10GHz 28V100W
效率 @10GHz 28V52%
增益 @10GHz 28V12.1dB














1、效率、增益標識為對應 48V 6GHz頻點，最大效率下的仿真數據；

仿真測試條件：VDD = 48 V, IDQ = 697 mA, 頻率 = 6 GHz


2、效率、增益標識為對應 28V 10GHz頻點，最大效率下的仿真數據

仿真測試條件：VDD = 28 V, IDQ = 697 mA, 頻率 = 10 GHz


D2J160DH2

Brief description for the product

D2J160DH2

D2J0160DH2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應用的理想選擇。

Operating Characteristics

參數值單位
產品尺寸800*4390mm
典型功率 @6GHz 48V160W
效率 @6GHz 48V69%
增益 @6GHz 48V19.6dB
典型功率 @10GHz 28V90W
效率 @10GHz 28V54%
增益 @10GHz 28V13.8dB














1、效率、增益標識為對應 48V 6GHz頻點，最大效率下的仿真數據；

仿真測試條件：VDD = 48 V, IDQ = 308 mA, 頻率 = 6 GHz


2、效率、增益標識為對應 28V 10GHz頻點，最大效率下的仿真數據

仿真測試條件：VDD = 28 V, IDQ = 308 mA, 頻率 = 10 GHz


D2J140DE2

Brief description for the product

D2J140DE2

D2J140DE2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應用的理想選擇。

Operating Characteristics

參數值單位
產品尺寸850*3770mm
典型功率 @6GHz 48V140W
效率 @6GHz 48V70%
增益 @6GHz 48V18.4dB
典型功率 @10GHz 28V75W
效率 @10GHz 28V55%
增益 @10GHz 28V13.0dB














1、效率、增益標識為對應 48V 6GHz頻點，最大效率下的仿真數據；

仿真測試條件：VDD = 48 V, IDQ =497 mA, 頻率 = 6 GHz


2、效率、增益標識為對應 28V 10GHz頻點，最大效率下的仿真數據

仿真測試條件：VDD = 28 V, IDQ = 497 mA, 頻率 = 10 GHz


D2J090DE2

Brief description for the product

D2J090DE2

D2J090DE2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應用的理想選擇。

Operating Characteristics

參數值單位
產品尺寸790*2835mm
典型功率 @6GHz 48V90W
效率 @6GHz 48V73%
增益 @6GHz 48V18.9dB
典型功率 @10GHz 28V50W
效率 @10GHz 28V58%
增益 @10GHz 28V13.7dB














1、效率、增益標識為對應 48V 6GHz頻點，最大效率下的仿真數據；

仿真測試條件：VDD = 48 V, IDQ =308 mA, 頻率 = 6 GHz


2、效率、增益標識為對應 28V 10GHz頻點，最大效率下的仿真數據

仿真測試條件：VDD = 28 V, IDQ = 308 mA, 頻率 = 10 GHz


D2J070DH2

Brief description for the product

D2J070DH2

D2J070DH2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應用的理想選擇。

Operating Characteristics

參數值單位
產品尺寸655*2725mm
典型功率 @6GHz 48V70W
效率 @6GHz 48V73%
增益 @6GHz 48V20.5dB
典型功率 @10GHz 28V38W
效率 @10GHz 28V60%
增益 @10GHz 28V15.5dB














1、效率、增益標識為對應 48V 6GHz頻點，最大效率下的仿真數據；

仿真測試條件：VDD = 48 V, IDQ =227 mA, 頻率 = 6 GHz


2、效率、增益標識為對應 28V 10GHz頻點，最大效率下的仿真數據

仿真測試條件：VDD = 28 V, IDQ = 227 mA, 頻率 = 10 GHz


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