| Part Number | Package | Band(MHz) | Ppeak(W) | Pout(dBm) | Eff@Pout(%) | Power Gain(dB) | Status | Download |
|---|---|---|---|---|---|---|---|---|
| DF2H0014-175CF | 400P1 | DC~1400 | 175 | 52.8 | 67.0 | 18.2 | Engineering Sample | |
| DF1H0015-900EF | 780P2 | DC~1500 | 900 | 58.7 | 74.5 | 17.4 | Engineering Sample | |
| DF2H0040-185DF | 360F1 | DC~4000 | 185 | 53.7 | 73.6 | 15.1 | Engineering Sample | |
| DF2H0040-135DF | 360F1 | DC~4000 | 135 | 51.6 | 78.5 | 19.0 | Engineering Sample | |
| DF2H0040-95DF | 360F1 | DC~4000 | 95.0 | 50.5 | 77.4 | 18.3 | Engineering Sample | |
| DF2H0060-45CF | 200P1 | DC~6000 | 45.0 | 47.5 | 75.5 | 19.3 | Engineering Sample | |
| DF2H0060-20DF | 200F1 | DC~6000 | 20.0 | 44.7 | 76.5 | 20.0 | Engineering Sample | |
| DF2H0060-20CF | 200P1 | DC~6000 | 20.0 | 44.7 | 76.5 | 20.0 | Engineering Sample | |
| DXG2CH50A-450EF* | 780P2 | 4800~5000 | 450 | 47.5 | 43.0 | 12.0 | Engineering Sample | |
| DXG2MH50A-50N* | LGA 6mm×10mm | 4700~5000 | 50.0 | 38.8 | 40.5 | 28.0 | Released Product | |
| DF1G0015-08N | LGA 4mm×4mm | 20~1500 | 8.0 | 39.4 | 59.4 | 17.2 | Engineering Sample | |
| DXG1PH60B-10N2* | DFN 4mm×4mm | DC~6000 | 10.0 | 34.0 | 32.0 | 20.0 | Released Product | |
| DXG1CH25P-320EF | 780P2 | 2435~2465 | 320 | 55.0 | 75.0 | 14.0 | Released Product | |
| D2J080DH2 | ||||||||
| D2J325DB2 | ||||||||
| D2J185DE2 | ||||||||
| D2J160DH2 | ||||||||
| D2J140DE2 | ||||||||
| D2J090DE2 | ||||||||
| D2J070DH2 |
DF2H0014-175CF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 1400 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 990 MHz | 52.8 | dBm |
Power Gain2 @ 990 MHz | 18.2 | dB |
Efficiency2@ 910 MHz | 67.0 | % |
Note: Measured in the DF2H0014-175CF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.
1. The output power is saturated power.
2. Test condition: Based on Pout. = 175W.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 1500 | MHz |
Supply Voltage (Typ.) | 50 | V |
Psat @ 910 MHz | 58.7 | dBm |
Power Gain1 @ 910 MHz | 18.6 | dB |
Efficiency1 @ 910 MHz | 68.8 | % |
Note: Measured in the DF1H0015-900EF application circuit, test condition: VDS = 50 V, IDQ = 600 mA.
1.Test condition: Based on Pout = 58 dbm.
DF2H0040-185DF is a 185 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 4000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2600 MHz | 53.7 | dBm |
Power Gain2 @ 2600 MHz | 15.1 | dB |
Efficiency2 @ 2600 MHz | 73.6 | % |
Note: Measured in the DF2H0040-185DF application circuit, test condition: VDS = 48 V, IDQ = 400 mA,Pulse width = 100 μs, Duty cycle = 10 %.
1.Test condition: Based on Maximum Output Power.
2 .Test condition: Based on Maximum Drain Efficiency.
DF2H0040-135DF is a 135 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 4000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2500 MHz | 51.6 | dBm |
Power Gain2 @ 2500 MHz | 19.0 | dB |
Efficiency2 @ 2500 MHz | 78.5 | % |
Note: Measured in the DF2H0040-135DF application circuit, test condition: VDS = 48 V, IDQ = 360 mA,Pulse width = 100 μs, Duty cycle = 10 %.
1.Test condition: Based on Maximum Output Power.
2 .Test condition: Based on Maximum Drain Efficiency.
DF2H0040-95DF is a 95 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 4000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2500 MHz | 50.5 | dBm |
Power Gain2 @ 2500 MHz | 18.3 | dB |
77.4Efficiency2 @ 2500 MHz | 77.4 | % |
Note: Measured in the DF2H0040-95DF application circuit, test condition: VDS = 48 V, IDQ = 200 mA,Pulse width = 100 μs, Duty cycle = 10 %.
1.Test condition: Based on Maximum Output Power.
2 .Test condition: Based on Maximum Drain Efficiency.
DF2H0060-45CF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2600 MHz | 47.5 | dBm |
Power Gain2 @ 2600 MHz | 19.3 | dB |
Efficiency2 @ 2600 MHz | 75.5 | % |
Note: Measured in the DF2H0060-45CF application circuit, test condition: VDS = 48 V, IDQ = 80 mA,Pulse width = 100 μs, Duty cycle = 10 %.
1.Test condition: Based on Maximum Output Power.
2 .Test condition: Based on Maximum Drain Efficiency.
DF2H0060-20DF is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2600 MHz | 44.7 | dBm |
Power Gain2 @ 2600 MHz | 20 | dB |
Efficiency2 @ 2600 MHz | 76.5 | % |
Note: Measured in the DF2H0060-20DF application circuit, test condition: VDS = 48 V, IDQ = 50 mA,Pulse width = 100 μs, Duty cycle = 10 %.
1.Test condition: Based on Maximum Output Power.
2 .Test condition: Based on Maximum Drain Efficiency.
DF2H0060-20CF is a 20 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 0 | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2600 MHz | 44.7 | dBm |
Power Gain2 @ 2600 MHz | 20 | dB |
Efficiency2 @ 2600 MHz | 76.5 | % |
Note: Measured in the DF2H0060-20CF application circuit, test condition: VDS = 48 V, IDQ = 50 mA,Pulse width = 100 μs, Duty cycle = 10 %.
1.Test condition: Based on Maximum Output Power.
2 .Test condition: Based on Maximum Drain Efficiency.
DXG2CH50A-450EF is a 450 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4800 MHz to 5000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 4800 | MHz |
Frequency (Max.) | 5000 | MHz |
Supply Voltage (Typ.) | 52 | V |
Psat (Typ.) | 56.6 | dBm |
Power Gain @ 4900 MHz | 11.8 | dB |
Efficiency @ 4900 MHz | 42.6 | % |
| ACPR @ 4900 MHz | -34.0/-47.0 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 52 V, IDQA = 2300 mA, VGSB = - 4.1 V, Pout = 47.5 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DXG2MH50A-50N is a 50 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4700 MHz to 5000 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2496 | MHz |
Frequency (Max.) | 2690 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 49.9 | dBm |
Power Gain @ 2600 MHz | 15.9 | dB |
Efficiency @ 2600 MHz | 56.5 | % |
| ACPR @ 2600 MHz | -32.5 | dBc |
Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 90 mA, VGSB = - 5.9 V, Pout = 41.3 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DF1G0015-08N is a 8 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 20 to 1500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 20 | MHz |
Frequency (Max.) | 1500 | MHz |
Supply Voltage (Typ.) | 28 | V |
Psat@325 MHz | 39.7 | dBm |
Power Gain @ 325 MHz | 17.5 | dB |
Efficiency @ 325 MHz | 63.8 | % |
Note: Measured in the DF1G0015-08N application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Input signal is CW.
DXG1PH60B-10N2 is a 10 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.
Parameter | Value | Unit |
Frequency (Min.) | DC | MHz |
Frequency (Max.) | 6000 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat (Typ.) | 40.3 | dBm |
Power Gain @ 3500 MHz | 20.2 | dB |
Efficiency @ 3500 MHz | 32.3 | % |
Note: Above Performance is the typical Doherty performance in Dynax's demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQA = 30 mA.
DXG1CH25P-320EF is a 320 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for industrial, scientific and medical applications at frequencies from 2400 MHz to 2500 MHz.
Parameter | Value | Unit |
Frequency (Min.) | 2400 | MHz |
Frequency (Max.) | 2500 | MHz |
Supply Voltage (Typ.) | 48 | V |
Psat1 @ 2435 MHz | 55.3 | dBm |
Power Gain2 @ 2435 MHz | 14.6 | dB |
Efficiency2 @ 2435 MHz | 73.6 | % |
Note: Above Performance is the typical performance in Dynax's demo with the device soldered onto the heatsink, test condition:VDS= 50 V, VGS = - 4.8 V.
D2J080DH2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應用的理想選擇。
| 參數 | 值 | 單位 |
| 產品尺寸 | 725*2985 | mm |
| 典型功率 @6GHz 48V | 80 | W |
| 效率 @6GHz 48V | 73 | % |
| 增益 @6GHz 48V | 20.6 | dB |
| 典型功率 @10GHz 28V | 44 | W |
| 效率 @10GHz 28V | 59 | % |
| 增益 @10GHz 28V | 15.5 | dB |
1、效率、增益標識為對應 48V 6GHz頻點，最大效率下的仿真數據；
仿真測試條件：VDD = 48 V, IDQ = 264 mA, 頻率 = 6 GHz
2、效率、增益標識為對應 28V 10GHz頻點，最大效率下的仿真數據
仿真測試條件：VDD = 28 V, IDQ = 264 mA, 頻率 = 10 GHz
D2J325DB2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應用的理想選擇。
| 參數 | 值 | 單位 |
| 產品尺寸 | 945*6075 | mm |
| 典型功率 @6GHz 48V | 325 | W |
| 效率 @6GHz 48V | 61 | % |
| 增益 @6GHz 48V | 17.3 | dB |
| 典型功率 @10GHz 28V | 180 | W |
| 效率 @10GHz 28V | 45 | % |
| 增益 @10GHz 28V | 9.8 | dB |
1、效率、增益標識為對應 48V 6GHz頻點，最大效率下的仿真數據；
仿真測試條件：VDD = 48 V, IDQ = 1267 mA, 頻率 = 6 GHz
2、效率、增益標識為對應 28V 10GHz頻點，最大效率下的仿真數據
仿真測試條件：VDD = 28 V, IDQ = 1267 mA, 頻率 = 10 GHz
D2J185DE2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應用的理想選擇。
| 參數 | 值 | 單位 |
| 產品尺寸 | 920*4250 | mm |
| 典型功率 @6GHz 48V | 185 | W |
| 效率 @6GHz 48V | 67 | % |
| 增益 @6GHz 48V | 18.1 | dB |
| 典型功率 @10GHz 28V | 100 | W |
| 效率 @10GHz 28V | 52 | % |
| 增益 @10GHz 28V | 12.1 | dB |
1、效率、增益標識為對應 48V 6GHz頻點，最大效率下的仿真數據；
仿真測試條件：VDD = 48 V, IDQ = 697 mA, 頻率 = 6 GHz
2、效率、增益標識為對應 28V 10GHz頻點，最大效率下的仿真數據
仿真測試條件：VDD = 28 V, IDQ = 697 mA, 頻率 = 10 GHz
D2J0160DH2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應用的理想選擇。
| 參數 | 值 | 單位 |
| 產品尺寸 | 800*4390 | mm |
| 典型功率 @6GHz 48V | 160 | W |
| 效率 @6GHz 48V | 69 | % |
| 增益 @6GHz 48V | 19.6 | dB |
| 典型功率 @10GHz 28V | 90 | W |
| 效率 @10GHz 28V | 54 | % |
| 增益 @10GHz 28V | 13.8 | dB |
1、效率、增益標識為對應 48V 6GHz頻點，最大效率下的仿真數據；
仿真測試條件：VDD = 48 V, IDQ = 308 mA, 頻率 = 6 GHz
2、效率、增益標識為對應 28V 10GHz頻點，最大效率下的仿真數據
仿真測試條件：VDD = 28 V, IDQ = 308 mA, 頻率 = 10 GHz
D2J140DE2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應用的理想選擇。
| 參數 | 值 | 單位 |
| 產品尺寸 | 850*3770 | mm |
| 典型功率 @6GHz 48V | 140 | W |
| 效率 @6GHz 48V | 70 | % |
| 增益 @6GHz 48V | 18.4 | dB |
| 典型功率 @10GHz 28V | 75 | W |
| 效率 @10GHz 28V | 55 | % |
| 增益 @10GHz 28V | 13.0 | dB |
1、效率、增益標識為對應 48V 6GHz頻點，最大效率下的仿真數據；
仿真測試條件：VDD = 48 V, IDQ =497 mA, 頻率 = 6 GHz
2、效率、增益標識為對應 28V 10GHz頻點，最大效率下的仿真數據
仿真測試條件：VDD = 28 V, IDQ = 497 mA, 頻率 = 10 GHz
D2J090DE2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應用的理想選擇。
| 參數 | 值 | 單位 |
| 產品尺寸 | 790*2835 | mm |
| 典型功率 @6GHz 48V | 90 | W |
| 效率 @6GHz 48V | 73 | % |
| 增益 @6GHz 48V | 18.9 | dB |
| 典型功率 @10GHz 28V | 50 | W |
| 效率 @10GHz 28V | 58 | % |
| 增益 @10GHz 28V | 13.7 | dB |
1、效率、增益標識為對應 48V 6GHz頻點，最大效率下的仿真數據；
仿真測試條件：VDD = 48 V, IDQ =308 mA, 頻率 = 6 GHz
2、效率、增益標識為對應 28V 10GHz頻點，最大效率下的仿真數據
仿真測試條件：VDD = 28 V, IDQ = 308 mA, 頻率 = 10 GHz
D2J070DH2是一款碳化硅（SiC）基氮化鎵（GaN）高電子遷移率晶體管（HEMT），具有高效率、高增益、易于匹配、寬帶寬等特點，是各種射頻和微波應用的理想選擇。
| 參數 | 值 | 單位 |
| 產品尺寸 | 655*2725 | mm |
| 典型功率 @6GHz 48V | 70 | W |
| 效率 @6GHz 48V | 73 | % |
| 增益 @6GHz 48V | 20.5 | dB |
| 典型功率 @10GHz 28V | 38 | W |
| 效率 @10GHz 28V | 60 | % |
| 增益 @10GHz 28V | 15.5 | dB |
1、效率、增益標識為對應 48V 6GHz頻點，最大效率下的仿真數據；
仿真測試條件：VDD = 48 V, IDQ =227 mA, 頻率 = 6 GHz
2、效率、增益標識為對應 28V 10GHz頻點，最大效率下的仿真數據
仿真測試條件：VDD = 28 V, IDQ = 227 mA, 頻率 = 10 GHz
中文版
