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產品

Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
DXG2PH60B-14N* DFN 4mm×4.5mm DC~6000 42.2 / 41.8 15.4 Released Product
DXG1PH60P-40N DFN 7mm×6.5mm DC~6000 46.3 33.0 31.7 21.3 Released Product
DXG1PH60P-60N* DFN 7mm×6.5mm DC~6000 47.8 40.0 55.0 19.5 Released Product

DXG2PH60B-14N*


Brief description for the product

DXG2PH60B-14N*

DXG2PH60B-14N is a 14 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6 GHz.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

0

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

42.2

dBm

Power Gain @ 3500 MHz

15.4

dB

Efficiency @ 3500 MHz

41.8

%

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS = 48 V, IDQ = 20 mA, Pout = Psat - 6 dB, Pulsed CW, Pulse width = 100 μs, Duty cycle = 10 %.

DXG1PH60P-40N


Brief description for the product

DXG1PH60P-40N

DXG1PH60P-40N is a 40 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station

applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

DC

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

46.3

dBm

Power Gain @ 1842 MHz

21.3

dB

Efficiency @ 1842 MHz

31.7

%

ACPR @ 1842 MHz

-41.0

dBc


Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heatsink, test condition: VDS= 48 V, IDQA = 20 mA, VGSB = - 5.1 V, Pout = 33.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 10.8 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

 


DXG1PH60P-60N*


Brief description for the product

DXG1PH60P-60N*

DXG1PH60P-60N is a 60 W unmatched RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for DC to 6 GHz cellular base station

applications. It features symmetric Doherty, wide bandwidth, high gain and a DFN package.


Operating Characteristics

Parameter

Value

Unit

Frequency (Min.)

DC

MHz

Frequency (Max.)

6000

MHz

Supply Voltage (Typ.)

48

V

Psat (Typ.)

47.8

dBm

Power Gain @  1842   MHz

19.5

dB

Efficiency  @    1842   MHz

55.0

%

ACPR @   1842   MHz

-30.0

dBC

Note: Above Performance is the typical Doherty performance in Dynax’s demo with the device soldered onto the heat sink, test condition: VDS = 48 V, IDQA = 45 mA, VGSB = - 5.0 V, Pout = 40.0 dBm Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01 % Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.


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